GTRA364002FC
High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
The GTRA364002FC is a 400-watt (PSAT) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA364002FC
- Description
- High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
- Min Frequency (MHz)
- 3300
- Max Frequency(MHz)
- 3900
- P3dB Output Power(W)
- 400
- Gain(dB)
- 13.0
- Efficiency(%)
- 40
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetrical Doherty design: Main P3dB 170 W Typ; Peak P3dB 230 W Typ
- Typical Pulsed CW performance; 3400-3600 MHz; 48 V; combined outputs
- Output power at P3dB 400 W
- Efficiency 60%
- Gain 14 dB
- Capable of handling 10:1 VSWR @48 V; 50 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS compliant
- Input matched