GTVA212701FA-V2
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
The GTVA212701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced earless package.
Product Specifications
- Part Number
- GTVA212701FA-V2
- Description
- High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz
- Min Frequency (MHz)
- 1800
- Max Frequency(MHz)
- 2200
- P3dB Output Power(W)
- 300
- Gain(dB)
- 19.0
- Efficiency(%)
- 38
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
- Output power P3dB 300 W
- Efficiency 68.5%
- Gain 17.5 dB
- Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
- Pb-free and RoHS compliant
- Input matched