MACOM’s MA4E2037 and MA4E2038 single diodes,
MA4E2039 anti-parallel pair and MA4E2040 series tee
are gallium arsenide beam lead Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial wafers
using a process designed for high device uniformity
and extremely low parasitics. The high carrier mobility of
gallium arsenide results in lower series resistance than a
silicon Schottky with equivalent capacitance, resulting in
lower noise figure and conversion loss. The diodes are
fully passivated with silicon nitride and have an additional
layer of a polymer for scratch protection. The protective
coatings prevent damage to the junction and the
anode air bridge during handling.
The high cut-off frequency of these diodes allows use
through millimeter wave frequencies. Typical applications
include single and double balanced mixers in PCN
transceivers and radios, automotive radar systems and
police radar detectors.
The MA4E2039 anti-parallel pair is designed for use in
sub harmonically pumped mixers. Close matching of the
diode characteristics in high LO suppression at the RF