The MA4E2508 SURMOUNTTM Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC™) process.
HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC™ devices
to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior mechanical
performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication
of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all devices
to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount placement
and multi- functional polarity orientations.