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TMOS
Designed for broadband commercial and military applications using push
pull circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of these devices makes possible solid state
transmitters for FM broadcast or TV channel frequency bands.
Features
- Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)
- 100% RuggednessTested at a Rated output Power
- MRF175GV @ 28 V, 225 MHz (“V” Suffix)
- Low Crss — 20 pF typ @ VDS = 28 V
- Low Thermal Resistance
Applications
- Aerospace and Defense
Specifications
- Min Frequency: 5 MHz
- Gain: 12 dB
- Efficiency: 55 %
- Pout: 150 W
- Max Frequency: 400 MHz
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
Contact Info
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser |
|---|---|---|---|---|---|
|
MRF175GU
Transistor, <150MHz, 28V, 150W, TMOS
|
CERAMIC |
In Stock: 8
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