Product Detail

Low Barrier Silicon Schottky Diodes
MACOM's MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Features
  • VF , RD and CJ matching options
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available
  • Chip, beam lead or packaged devices
Applications
  • ISM
Specifications
  • Total Capacitance: 0.08 pF
  • Vf: 0.29 
  • Vb: 2 
  • Dynamic Resistance: 20 ohms
Datasheet: Request Datasheet
Package
  • B48
Package Category
  • Beam Lead
Part Number Package MACOM Richardson RFPD DigiKey Mouser
MSS30-PCB46-B48
Low Barrier Silicon Schottky Diodes
B48 Inquire

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