PTRA097008NB-V1

High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz

The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTRA097008NB-V1
Description
High Power RF LDMOS FET 630 W; 48 V; 920 - 960 MHz
Min Frequency (MHz)
500
Max Frequency(MHz)
1000
P3dB Output Power(W)
600
Gain(dB)
19.0
Efficiency(%)
49
Operating Voltage(V)
48
Package Category
Plastic
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal input and output matching
  • Asymmetric design: Main P1dB = 300 W typ; Peak P1dB = 400 W typ
  • Typical pulsed CW performance (10 ?s; 10% duty cycle; class AB test); 942 MHz; 48 V; combined outputs; Doherty configuration: Output power at P1dB = 180 W; Output power at P3dB = 600 W; Efficiency = 52%; Gain = 19 dB
  • Capable of handing 10:1 VSWR at 48 V; 89 W (CW)output power
  • Pb-free; RoHS compliant

Technical Resources

Datasheet


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