RF Power Transistor - GaN on Si - Pulsed

image-from-the-document-manager

At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using bipolar, MOSFET, and now GaN technologies to meet our customers’ most demanding needs. Our GaN on Silicon products, offered as discrete transistors and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency,  and ruggedness over wide operating bandwidths.

Recent Searches
Recently Viewed Products
  • No Recent Parts found!

Parametric Search

Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Efficiency (%) Test Freq (GHz) Package Theta J-C (C/W) Datasheet Max Frequency (MHz) Min Frequency (MHz) Model Data (Sparameters) Package Category ROHS Lead-Free Application Notes Type Features Lead Finish Compatible Parts Product Image Brightcove Video ADS & SPICE Model Info
 
 
 
 
 
 
 
 
NPT25015 Buy Gallium Nitride 28V, 23W RF Power Transistor
DC - 3
28 23 14 2.5 SOIC8NE
6.3 NPT25015.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
23 W P3dB peak envelope power (PEP)
1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
100% RF tested
Thermally-enhanced industry standard package
High reliability gold metallization process
Subject to EAR99 Export Control
Lead-Free
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT35015D Buy Gallium Nitride 28V, 18W RF Power Transistor
3 - 4
28 18 11 3.5 SOIC8NE
6.3 NDS-005 Rev 5 NPT35015.pdf
4000 3000 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
Thermally Enhanced Industry Standard Package
100% RF tested
Characterized for Operation up to 32V
1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
25W P3dB peak Envelope Power
18W P3dB CW Power
Subject to EAR99 Export Contyrol
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D Buy Gallium Nitride 28V, 45W RF Power Transistor
DC - 3
28 45 13 2.5 SOIC8NE
4.3 NDS-010 Rev 4 NPT1004.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
2-Stage High Power MMIC Amplifier
RTH of 2.7°C/W Resulting in 20+ Years of Operation at Max Flange of 90°C at PSAT
Typical 50W Broadband Saturated Power Output Across 1.0-2.0GHz
Unmatched Output for Tuning Flexibility
Input Matched to 50 Ohms
Subject to EAR99 Export Control
NP00004A_SOIC-8NE_new_logo.jpg