Switches - SP5T

Switches - SP5T

At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications. 

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releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Insertion Loss (dB) Isolation (dB) IIP3 (dBm) CW Incident Power (W) 75 Ohm Package Category Package ROHS Lead-Free Datasheet Model Data (Sparameters) Application Notes Configuration Driver Features Marking Product Image Brightcove Video Xmicrowave URL Xmicrowave PCB Drawings
 
 
 
 
 
 
2003/08/22 MA4AGSW5 Buy AlGaAs Reflective
50 50000 1.1 47 40 0.2 No
Die
DIE
Yes
Yes
MA4AGSW5.pdf
MA4AGSW5_SPAR.ZIP
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
Without
Ultra Broad Bandwidth : 50 MHz to 50 GHz

Polymer Scratch protection

Silicon Nitride Passivation

MACOM's Unique AlGaAs Hetero-Junction Anode Technology

+10mA for Isolation state

-10mA for low loss state

Low Current Consumption.

35 dB Isolation at 50 GHz

1.7dB Insertion Loss at 50 GHZ

Functional Bandwidth : 50 MHz to 70 GHz

RoHS* Compatible

260°C Reflow Compatible

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3203639713001
https://www.xmicrowave.com/product/xm-a7t5-0809d/
Xmicrowave.png
2003/05/01 MA4SW510 Buy HMIC™ PIN Diode
50 26500 0.9 38 40 1 No
Die/Bumped Die
DIE
Yes
Yes
MA4SW510.pdf
MA4SW510_SPAR.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
Without
Broad Bandwidth

50 nS Switching Speed

Rugged Fully Monolithic

Lower Insertion Loss and Higher Isolation than Comparable pHEMT/ Discrete Component Designs

Usable from 50 MHz to 26.5 GHz

Specified from 50 MHz to 20 GHz

Up to +30dBm C.W. Power Handling @ +25°C

Glass Encapsulated Chip with Polymer Protective Coating

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2003/05/02 MA4SW510B-1 Buy Reflective PIN Diode
2000 18000 1.1 41 40 2 No
Die/Bumped Die
DIE
Yes
Yes
MA4SW510B-1.pdf
MA4SW510B-1_SPAR.zip
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
AN3021 - PIN Diodes for Microwave Switch Designs
SP5T
Without
Broad Bandwidth Specified up to 18 GHz

Fully Monolithic

Rugged, Glass Encapsulated Construction

Integrated Bias Network

Usable up to 26 GHz

Low Insertion Loss / High Isolation

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MASW-010351 Buy SP5T High Isolation Terminated Switch
10 4000 1.4 57 50 1 No
Plastic Surface Mount
4mm PQFN-24LD
Yes
Yes
MASW-010351.pdf
MASW-010351_Sparameters.zip
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
Without
Isolation: 51 dB @ 2.1 GHz

RoHS* Compliant

260°C Reflow Compatible

Lead-Free 4 mm 24-Lead PQFN package

50 O Terminated Outputs (Off-State)

6 States: 5 ON paths and All-Off State

Low Gate Lag for timing sensitive applications

Integral CMOS 3:5 Decoder, Only 3 Control Pins

Input IP3: 50 dBm Typical @ 2.1 GHz

nsertion Loss: 1.0 dB @ 2.1 GHz

S044
4x4_24-lead PQFN.jpg
MASW-010351.zip
MASW-005100-1194 Buy HMIC SP5T Silicon PIN Diode Switch
50 26500 0.7 50 40 2 No
Die/Bumped Die
DIE
Yes
Yes
MASW-005100-1194.pdf
AN3009 - S-Parameter S2P File Format Guide
AN3018 - Known Good Die Delivery Specification
M513 - Tape and Reel Packaging for Surface Mount Components
M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
AN3007 - ESD/EOS Protection for GaAs MMIC Switches
AN3008 - Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
M515 - Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
S2079 - Drivers for GaAs FET Switches and Digital Attenuators
AG318 - Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
SP5T
Without
Ultra Broad Bandwidth: 50MHz to 26GHz

+33dBm Power Handling

Reliable, Fully Monolithic, Glass Encapsulated Construction

50nS Switching Speed

0.9 Insertion Loss: 38dB Isolation at 20GHz

RoHS Compliant

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