X-Band
MACOM’s GaN-on-SiC products are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), MACOM’s products support continuous improvements in SWAP-C benchmarks. The performance demonstrated by many of these devices support the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems. And, MACOM’s versatile packaging capabilities provide several options for customers to implement these products into various types of systems, while managing critical factors such as thermals.
| Part Number | Description |
|---|---|
| CMPA901A020 | 9.0 - 10.0 GHz; 20 W; Packaged GaN MMIC Power Amplifier |
| CGHV1J025D-GP4 | 25 W; 18.0 GHz; GaN HEMT Die |
| WSM5100S | 8.5 - 10.5 GHz, 16W GaN T/R Module |
| CMPA901A035 | 35 W; 9.0 - 10.0 GHz; 28 V; GaN MMIC for Radar Power Amplifiers |
| CGHV1A250 | 8.8 - 9.6 GHz, 250 W, 45 V, Packaged GaN Transistor |
| CMPA851A025 | 8.5 - 10.5 GHz, 40 W GaN MMIC HPA |
| CGHV1F025 | 25 W; DC - 15 GHz; 40 V; GaN HEMT |
| CMPA851A050 | 8.5 - 10.5 GHz GaN MMIC HPA |
| CMPA801B030 | 30 W; 7.9 - 11.0 GHz; GaN MMIC; Power Amplifier |
| CGHV1J006D-GP4 | 6 W; 18.0 GHz; GaN HEMT Die |
| CMPA9396025 | 25 W; 9.3 - 9.6 GHz GaN MMIC Power Amplifier |
| CGHV96050F2 | 50 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched GaN HEMT |
| CMPA851A005S | 8.5 - 10.5 GHz, 4.5 W GaN High Power Amplifier |
| CGHV96130F | 130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications |
| CGHV1F006 | 6 W; DC - 15.0 GHz; 40 V; GaN HEMT |
| CGHV1J070D-GP4 | 70 W; 18.0 GHz; GaN HEMT Die |
| CMPA601C025 | 40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier |
| CGHV96100 | 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier |
| CMPA851A012 | 8.5 - 10.5 GHz, 20 W GaN MMIC HPA |