CGHV1F006

6 W; DC - 15.0 GHz; 40 V; GaN HEMT

The CGHV1F006 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT)  designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on a C-Band (5.5 – 6.5-GHz) amplifier. Additional application circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 – 9.6 GHz. The CGHV1F006 operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40 V to as low as 20-V VDD; maintaining high gain and efficiency. 

Product Specifications

Part Number
CGHV1F006
Description
6 W; DC - 15.0 GHz; 40 V; GaN HEMT
Min Frequency(MHz)
0
Max Frequency(MHz)
15000
Peak Output Power(W)
6
Gain(dB)
7.0
Efficiency(%)
52
Operating Voltage(V)
40
Form
Packaged Discrete Transistor
Package Category
Surface Mount
Technology
GaN-on-SiC

Features

  • Up to 15 GHz Operation
  • 8 W Typical Output Power
  • 17 dB Gain at 6.0 GHz
  • 15 dB Gain at 9.0 GHz
  • Application circuits for 5.8 – 7.2 GHz; 7.9 – 8.4 GHz; and 8.5 – 9.6 GHz.
  • High degree of APD and DPD correction can be applied

Order from MACOM

CGHV1F006S
Transistor GaN G40V4 6W DC-15GHz DFN
CGHV1F006S Distributors
CGHV1F006S-AMP1
AMPLIFIER ASSY, INCLUDES CGHV1F006S
CGHV1F006S-AMP1 Distributors
CGHV1F006S-AMP3
AMPLIFIER ASSY, INCLUDES CGHV1F006S
CGHV1F006S-AMP3 Distributors