CGHV1A250

8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor

The CGHV1A250F is a 300 W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing The high performance, 45 V, 0.25 um GaN on SiC production process, the CGHV1A250F operates from 8.8 - 9.6 GHz. It targets pulsed radar applications such a marine, defense and weather radar. The CGHV1A250F typically achieves 300 W of saturated output power with 12 dB of large signal gain and 40% drain efficiency under pulsed operation.

Product Specifications

Part Number
CGHV1A250
Description
8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
Min Frequency(MHz)
8800
Max Frequency(MHz)
9600
Peak Output Power(W)
300
Gain(dB)
12.0
Efficiency(%)
40
Operating Voltage(V)
45
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • Psat: 300 W
  • DE: 40 %
  • LSG: 12 dB
  • S21: 15 dB
  • S11: -9 dB
  • S22: -7 dB

Technical Resources

Data Sheet

Model Data (Sparameters)


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CGHV1A250F
Amplifier GaN G50V4 8.8-9.6GHz 300W
CGHV1A250F-AMP
AMPLIFIER ASSY, INCLUDES CGHV1A250F
CGHV1A250F-AMP Distributors