CGHV1A250
8.8 - 9.6 GHz, 250 W, 50 V, Packaged GaN Transistor
The CGHV1A250F is a 250 W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing The high performance, 50V, 0.25 um GaN on SiC production process, the CGHV1A250F operates from 8.8 - 9.6 GHz. It targets pulsed radar applications such a marine, defense and weather radar. The CGHV1A250F typically achieves 300 W of saturated output power with 12 dB of large signal gain and 40% drain efficiency under pulsed operation.
Product Specifications
- Part Number
- CGHV1A250
- Description
- 8.8 - 9.6 GHz, 250 W, 50 V, Packaged GaN Transistor
- Min Frequency(MHz)
- 8800
- Max Frequency(MHz)
- 9600
- Gain(dB)
- 12.0
- Package Category
- Flange
Features
- Psat: 300 W
- DE: 40 %
- LSG: 12 dB
- S21: 15 dB
- S11: -9 dB
- S22: -7 dB
Applications
- Defense
- Marine
- Weather Radar