CGHV1J025D-GP4

25 W; 18.0 GHz; GaN HEMT Die

The CGHV1J025D is a high-voltage; gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on a silicon-carbide substrate; using a  0.25-μm  gate-length fabrication process. This GaN-on-SiC product offers superior high-frequency; high-efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.

Product Specifications

Part Number
CGHV1J025D-GP4
Description
25 W; 18.0 GHz; GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
18000
Peak Output Power(W)
25
Gain(dB)
17.0
Efficiency(%)
60
Operating Voltage(V)
40
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 17 dB Typ. Small Signal Gain at 10 GHz
  • 60% Typ. PAE at 10 GHz
  • 25 W Typical PSAT
  • 40 V Operation
  • Up to 18 GHz Operation

Order from MACOM

CGHV1J025D-GP4
DIE, 25W, 18.0GHz, GaN HEMT, 510437
CGHV1J025D-GP4 Distributors