CMPA601C025

40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier

The CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25- μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

Product Specifications

Part Number
CMPA601C025
Description
40 W; 6.0 - 12.0 GHz; GaN MMIC; Power Amplifier
Min Frequency(MHz)
6000
Max Frequency(MHz)
12000
Peak Output Power(W)
40
Gain(dB)
25.0
Efficiency(%)
32
Operating Voltage(V)
28
Form
Packaged MMIC
Package Category
Flange, Die
Technology
GaN-on-SiC

Features

  • 40 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage

Order from MACOM

CMPA601C025D
DIE, MMIC, GaN, PA, 25W, 6.0-12.0GHz
CMPA601C025D Distributors
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CMPA601C025F
MMIC, PA, 25W, 6.0-12.0GHz, GaN, FLANGE
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AMPLIFIER ASSY, INCLUDES CMPA601C025F
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