CGHV96130F

130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications

The CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Product Specifications

Part Number
CGHV96130F
Description
130 W; 8.4 - 9.6 GHz; 50 ohm; Input/Output Matched GaN HEMT for X-Band Radar Applications
Min Frequency(MHz)
8400
Max Frequency(MHz)
9600
Peak Output Power(W)
130
Gain(dB)
12.2
Efficiency(%)
42
Operating Voltage(V)
40
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 166 W POUT typical
  • 7.5 dB Power Gain
  • 42% Typical PAE
  • 50 Ohm Internally Matched
  • <0.3 dB Power Droop

Technical Resources

Datasheet


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CGHV96130F
Amplifier,130W,GaN HEMT,40V,8.4-9.6GHz
CGHV96130F Distributors