CG2H80045D-GP4

45 W, 8.0 GHz, GaN HEMT Die

The CG2H80045D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Specifications

Part Number
CG2H80045D-GP4
Description
45 W, 8.0 GHz, GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
8000
Peak Output Power(W)
45
Gain(dB)
15.0
Efficiency(%)
65
Operating Voltage(V)
28
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 28 V Operation
  • 45 W Typical PSAT
  • High Breakdown Voltage
  • High Temperature Operation
  • Up to 8 GHz Operation
  • High Efficiency

Technical Resources

Datasheet


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CG2H80045D-GP4
DIE, GAN HEMT, 45W, DC-8.0GHz, G28V4, GP
CG2H80045D-GP4 Distributors