CGH21240

240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX

The CGH21240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH21240F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier applications. The transistor is supplied in a ceramic/metal flange package. 

Product Specifications

Part Number
CGH21240
Description
240 W; 1800 - 2300 MHz; GaN HEMT for WCDMA; LTE; WiMAX
Min Frequency(MHz)
1800
Max Frequency(MHz)
2300
Peak Output Power(W)
240
Gain(dB)
15.0
Efficiency(%)
33
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 15 dB Gain
  • 1.8 – 2.3 GHz Operation
  • -35 dBc ACLR at 40 W PAVE
  • 33% Efficiency at 40 W PAVE
  • High Degree of DPD Correction Can be Applied

Technical Resources

Datasheet

Model Data (Sparameters)


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