CGH35060P1

60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX

The CGH35060P1 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P1 ideal for 3.3 - 3.6-GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.

Product Specifications

Part Number
CGH35060P1
Description
60 W; 3300 - 3600 MHz; 28 V; GaN HEMT for WiMAX
Min Frequency(MHz)
3300
Max Frequency(MHz)
3600
Peak Output Power(W)
60
Gain(dB)
12.0
Efficiency(%)
25
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Pill
Technology
GaN-on-SiC

Features

  • 3.3 – 3.6 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 8.0 W PAVE at < 2.0% EVM
  • 25% Drain Efficiency at 8 W PAVE

Technical Resources

Datasheet


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CGH35060P1
60W, 3.5GHz, 830110P, GaN HEMT, PILL