CGH35060P2

60 W; 3100 - 3500 MHz; 28 V GaN HEMT

The CGH35060P2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH35060P2 ideal for 3.1 - 3.5-GHz; S-band; pulsed-amplifier applications. The transistor is supplied in a ceramic/metal flange and pill package.

Product Specifications

Part Number
CGH35060P2
Description
60 W; 3100 - 3500 MHz; 28 V GaN HEMT
Min Frequency(MHz)
3100
Max Frequency(MHz)
3500
Peak Output Power(W)
60
Gain(dB)
12.0
Efficiency(%)
60
Operating Voltage(V)
28
Form
Packaged Discrete Transistor
Package Category
Flange, Pill
Technology
GaN-on-SiC

Features

  • 3.1 – 3.5 GHz Operation
  • 60 W Peak Power Capability
  • 12 dB Small Signal Gain
  • 60% Drain Efficiency

Technical Resources

Datasheet


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CGH35060P2
60W, 3.5GHz, 830185P2, GaN HEMT, FLANGE
CGH35060P2 Distributors