CGHV40320D-GP4

320 W; 4.0 GHz; GaN HEMT Die

The CGHV40320D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Specifications

Part Number
CGHV40320D-GP4
Description
320 W; 4.0 GHz; GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
4000
Peak Output Power(W)
320
Gain(dB)
19.0
Efficiency(%)
65
Operating Voltage(V)
50
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 19 dB Typical Small Signal Gain at 4 GHz
  • 65% Typical Power Added Efficiency
  • 320 W Typical PSAT
  • 50 V Operation
  • High Breakdown Voltage
  • Up to 4 GHz Operation

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGHV40320D-GP4
DIE, 320W, 4.0 GHz, 50V, GaN HEMT, 51044
CGHV40320D-GP4 Distributors