CGHV50200
200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT
The CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide bandwidth capabilities; which makes the CGHV50200F ideal for troposcatter communications; 4.4 - 5.0-GHz C-Band SatCom applications and beyond line of sight. The transistor is supplied in a ceramic/metal flange package; type 440215.
Product Specifications
- Part Number
- CGHV50200
- Description
- 200 W; 4400 - 5000 MHz; 50 ohm Input/Output-Matched; GaN HEMT
- Min Frequency(MHz)
- 4400
- Max Frequency(MHz)
- 5000
- Peak Output Power(W)
- 200
- Gain(dB)
- 11.5
- Efficiency(%)
- 33
- Operating Voltage(V)
- 40
- Form
- Packaged Discrete Transistor
- Package Category
- Flange
- Technology
- GaN-on-SiC
Features
- 4.4 – 5.0 GHz Operation
- 180 W Typical PSAT
- 11.5 dB Typical Power Gain
- 48% Typical Power Efficiency
- 50 Ohm Internally Matched