CGHV60170D-GP4

170 W; 6.0 GHz; 50 V GaN HEMT Die

The CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated-electron-drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

Product Specifications

Part Number
CGHV60170D-GP4
Description
170 W; 6.0 GHz; 50 V GaN HEMT Die
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
170
Gain(dB)
17.0
Efficiency(%)
65
Operating Voltage(V)
50
Form
Discrete Bare Die
Package Category
Die
Technology
GaN-on-SiC

Features

  • 65% Typical Power Added Efficiency
  • 170 W Typical PSAT
  • 50 V Operation
  • High Breakdown Voltage
  • Up to 6 GHz Operation

Technical Resources

Datasheet

Model Data (Sparameters)


Order from MACOM

CGHV60170D-GP4
DIE, GaN HEMT, 170W, DC-6.0GHz, G50V3, 5
CGHV60170D-GP4 Distributors