CGY2190UH

Low Noise Amplifier, W-Band

The CGY2190UH/C2 is a high-performance GaAs Low Noise Amplifier MMIC designed to operate in the W-band. The die is manufactured using MACOM’s Advanced 70 nm gate length high Indium content mHEMT technology (D007IH). The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Product Specifications

Part Number
CGY2190UH
Description
Low Noise Amplifier, W-Band
Min Frequency(MHz)
75000
Max Frequency(MHz)
110000
Gain(dB)
23.0
Output P1dB(dBm)
1.00
Bias Current(mA)
33
NF(dB)
2.8
Package Category
Die

Features

  • Suitable for W-Band Applications
  • Wide Frequency Range: 75 - 100 GHz
  • Small Signal Gain: 23 dB
  • Noise Figure: 2.8 dB @ 90 GHz
  • Output P1dB: 1 dBm
  • Ultra Low Power consumption: (33 mW @ VD=1 & VG=0 V; 22 mW @ VD=1.2 & VG=-0.1 V)
  • Chip Size: 2000 x 3000 μm
  • Samples Available
  • Space and MIL-STD Available
  • RoHS* Compliant

Technical Resources

Datasheet


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CGY2190UH
Low Noise Amplifier, W-Band