CGY2220UH

Low Noise Amplifier

The CGY2220UH/C1 is a high performance GaAs Wide Band Low Noise amplifier designed to operate from 1 to 12 GHz with an exceptionally low noise figure of 1.5 dB and very high gain of 36 dB. The device is a 3 stages Low Noise amplifier with low power consumption, the drain voltage is typically 1.5 V and total current consumption 52 mA. The device can be used in radio and radar systems, telecommunication and instrumentation applications. This die is manufactured using D007IH MACOM high performance 70 nm gate length high Indium content mHEMT low noise technology. The MMIC uses gold bonding pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Product Specifications

Part Number
CGY2220UH
Description
Low Noise Amplifier
Min Frequency(MHz)
1000
Max Frequency(MHz)
12000
Gain(dB)
36.0
OIP3(dBm)
12.0
Bias Current(mA)
54
NF(dB)
1.5
Package Category
Die

Features

  • Operating Frequency Range: 1 to 12 GHz
  • Noise Figure: 1.5 dB
  • Gain: 36 dB
  • 50 Ω Input and Output Matched
  • Input Return Loss:12 dB @ 10 GHz
  • Output Return Loss:10 dB @ 10 GHz
  • Power Supply: IDD = 50 mA @ VDD = 1.5 V
  • Circuit Size: 1.5 mm x 1.0 mm
  • 100% RF Tested, Known Good Die
  • Demonstration Boards Available
  • Samples Available
  • RoHS* Compliant

Technical Resources

Datasheet


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CGY2220UH
Low Noise Amplifier