CMPA0060002

2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier

The CMPA0060002 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC employs a distributed (traveling-wave) amplifier design approach; enabling extremely wide bandwidths to be achieved in a small footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

Product Specifications

Part Number
CMPA0060002
Description
2 W; 20 MHz - 6000 MHz; GaN MMIC Power Amplifier
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
2
Gain(dB)
17.0
Efficiency(%)
23
Operating Voltage(V)
28
Form
Packaged MMIC
Package Category
Flange
Technology
GaN-on-SiC

Features

  • 17 dB Small Signal Gain
  • 3 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation

Order from MACOM

CMPA0060002D
DIE, MMIC, DA, 2W, DC-6GHz, GaN HEMT, 51
CMPA0060002D Distributors
CMPA0060002F
MMIC, PA, 2W, DC-6.0GHz, GaN 510717, FLA
CMPA0060002F Distributors
CMPA0060002F-AMP
AMPLIFIER ASSY, 20 - 6000MHz, INCLUDES C
CMPA0060002F-AMP Distributors
CMPA0060002F1
MMIC, GaN, 28V, 2W, DC-6.0GHz, 440219 PK
CMPA0060002F1 Distributors
CMPA0060002F1-AMP
AMPLIFIER ASSY, DC-6.0GHz, INCLUDES CMPA
CMPA0060002F1-AMP Distributors