CMPA0060025

25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier

The CMPA0060025 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths to be achieved in a small-footprint.

Product Specifications

Part Number
CMPA0060025
Description
25 W; DC - 6.0 GHz; GaN MMIC Power Amplifier
Min Frequency(MHz)
0
Max Frequency(MHz)
6000
Peak Output Power(W)
25
Gain(dB)
18.0
Efficiency(%)
33
Operating Voltage(V)
50
Form
Packaged MMIC
Package Category
Flange, Die
Technology
GaN-on-SiC

Features

  • 18 dB Small Signal Gain
  • 30 W Typical PSAT
  • Operation up to 50 V
  • High Breakdown Voltage
  • High Temperature Operation

Order from MACOM

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