CMPA0530002

2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications

The CMPA0530002 is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the input. The CMPA0530002 operates on a 28 volt rail while housed in a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 28V to as low as 20V VDD; maintaining high gain and efficiency.

Product Specifications

Part Number
CMPA0530002
Description
2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications
Min Frequency(MHz)
500
Max Frequency(MHz)
3000
Peak Output Power(W)
2
Gain(dB)
18.0
Efficiency(%)
52
Operating Voltage(V)
28
Form
Packaged MMIC
Package Category
Surface Mount
Technology
GaN-on-SiC

Features

  • 18 dB Small Signal Gain
  • 2.9 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Size 0.118 x 0.157 x 0.033 inches

Order from MACOM

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GaN HEMT, MMIC, 2W, 0.5-3.0GHz, 28V, 3x4
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AMPLIFIER ASSY, 0.5-3.0GHz, INCLUDES CMP
CMPA0530002S-AMP1 Distributors