CMPA1C1D060D

60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier

The CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-?m gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.

Product Specifications

Part Number
CMPA1C1D060D
Description
60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier
Min Frequency(MHz)
12700
Max Frequency(MHz)
13250
Gain(dB)
26.0

Features

  • Features 26 dB Small Signal Gain
  • 60 W Typical PSAT
  • Operation up to 40 V
  • High Breakdown Voltage
  • High Temperature Operation

Technical Resources

Datasheet


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