CMPA1D1E025

25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier

The CMPA1D1E025F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25 -μm  gate length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead; 25-mm x 9.9-mm; metal/ceramic flanged package for optimal electrical and thermal performance.

Product Specifications

Part Number
CMPA1D1E025
Description
25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier
Min Frequency(MHz)
13500
Max Frequency(MHz)
14500
Gain(dB)
26.0

Features

  • 24 dB Small Signal Gain
  • 40 W Typical Pulsed PSAT
  • Operation up to 40 V
  • 20 W linear power under OQPSK
  • Class A/B high gain; high efficiency 50 ohm MMIC Ku Band high power amplifier

Technical Resources

Datasheet


Order from MACOM

CMPA1D1E025F
MMIC, GaN, ASSY, 25W, 13.25-14.75GHz, 40
CMPA1D1E025F Distributors
CMPA1D1E025F-AMP
AMPLIFIER ASSY, INCLUDES CMPA1D1E025F
CMPA1D1E025F-AMP Distributors