ENGDA00072

Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz

 The ENGDA00072 is a wideband GaAs  MMIC distributed amplifier (DA) die which  operates from 0.8 to 20 GHz. The design is  50 ohm matched and includes all required  bias circuitry to function to 0.5 GHz. The  DA delivers 9 dB gain at 20 GHz with 2.5 dB  of positive gain slope across 2 – 20 GHz.  The amplifier has gold backside  metallization and is designed to be silver  epoxy attached. The RF interconnects are  designed to account for wire bonds and  external microstrip flares for optimal  integrated return loss. No additional  ground interconnects are required.  

Product Specifications

Part Number
ENGDA00072
Description
Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz
Min Frequency(MHz)
800
Max Frequency(MHz)
20000
Gain(dB)
8.0
Output P1dB(dBm)
17.50
OIP3(dBm)
36.0
Bias Current(mA)
110
NF(dB)
4.0

Features

  • Wideband Performance
  • High Linearity
  • Positive Gain Slope: 2.5 dB
  • Excellent Return Loss : 18 dB typical
  • Die Size : 4.0 x 2.48 x 0.1 mm; 0.157 x 0.098 x 0.004 inch
  • RoHS* Compliant

Technical Resources

Datasheet


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ENGDA00072
Wideband Distributed Amplifier, DIE, 0.8 to 20 GHz