GTRA374902FC-V1
High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
The GTRA374902FC is a 450-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA374902FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 450 W, 48 V, 3600 - 3700 MHz
- Min Frequency (MHz)
- 3600
- Max Frequency(MHz)
- 3700
- P3dB Output Power(W)
- 450
- Gain(dB)
- 12.0
- Efficiency(%)
- 38
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetrical Doherty design: Main P3dB 220 W Typ, Peak P3dB 300 W Typ
- Typical Pulsed CW performance; 3700 MHz, 48 V, 10% duty cycle
- Output power 450 W
- Efficiency 60%
- Gain 11.5 dB
- Capable of handling 10:1 VSWR @48 V, 63 W (WCDMA) output power
- Low thermal resistance
- Pb-free and RoHS complian
- Input matched