GTRA384802FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
The GTRA384802FC is a 400-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRA384802FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz
- Min Frequency (MHz)
- 3600
- Max Frequency(MHz)
- 3800
- P3dB Output Power(W)
- 400
- Gain(dB)
- 13.0
- Efficiency(%)
- 42
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Asymmetrical Doherty design: Main P3dB 200 W Typ, Peak P3dB 280 W Typ
- Typical Pulsed CW performance; 3800 MHz, 48 V, combined outputs, 10% duty cycle
- Output power 400 W
- Efficiency 62%
- Gain 13 dB
- Capable of handling 10:1 VSWR @48 V, 63 W (WCDMA) output power
- Pb-free and RoHS compliant
- Input matched