GTRB097152FC
High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz
The GTRB097152FC is a 900-watt (P4dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB097152FC
- Description
- High Power RF GaN-on-SiC HEMT 900 W, 48 V, 758 - 960 MHz
- Min Frequency (MHz)
- 758
- Max Frequency(MHz)
- 968
- P3dB Output Power(W)
- 450
- Gain(dB)
- 18.0
- Efficiency(%)
- 59
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Peak Output Power(W)
- 900
- Technology
- GaN-on-SiC
Features
- Efficiency at P4dB = 73%
- Typical Pulsed CW performance, 960 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P4dB = 900 W