GTRB097152NCV1A
Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz
The GTRB097152NC is a 820 W (P5dB) GaN on SiC HEMT amplifier for use in multi-standard cellular applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB097152NCV1A
- Description
- Thermally Enhanced GaN Amplifier 820 W, 48 V, 758 - 960 MHz
- Min Frequency(MHz)
- 758
- Max Frequency(MHz)
- 960
- Supply Voltage(V)
- 48
- Gain(dB)
- 18.2
- Efficiency
- 68
Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 960 MHz, 48 V, 10 μs pulse width, 10% Duty Cycle, Combined Outputs
- Output Power @ P5dB = 820 W
- Efficiency @ P5dB = 68%
- Thermally Enhanced Package
- RoHS* Compliant