GTRB206002FC
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
The GTRB206002FC/1 is a 500-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB206002FC
- Description
- High Power RF GaN-on-SiC HEMT 500 W, 48 V, 1930 - 2020 MHz
- Min Frequency (MHz)
- 1930
- Max Frequency(MHz)
- 2020
- P3dB Output Power(W)
- 500
- Gain(dB)
- 14.8
- Efficiency(%)
- 53
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2020 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 500 W
- Efficiency at P3dB = 63%
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
- GaN-on-SiC HEMT technology