GTRB224402FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz
The GTRB224402FC is a 400-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB224402FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2110 - 2200 MHz
- Min Frequency (MHz)
- 2110
- Max Frequency(MHz)
- 2200
- P3dB Output Power(W)
- 400
- Gain(dB)
- 15.5
- Efficiency(%)
- 55
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2200 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 400 W
- Efficiency at P3dB = 65%
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
- GaN-on-SiC HEMT technology