GTRB246608FC-V1
High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz
The GTRB246608FC is a 500-watt (P4dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB246608FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 500 W, 48 V, 2300 - 2400 MHz
- Min Frequency (MHz)
- 2300
- Max Frequency(MHz)
- 2400
- P3dB Output Power(W)
- 500
- Gain(dB)
- 15.7
- Efficiency(%)
- 54
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2400 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P4dB = 600 W
- Efficiency at P4dB = 60%