GTRB264318FC-V1
High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
The GTRB264318FC is a 400-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB264318FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 400 W, 48 V, 2500 - 2700 MHz
- Min Frequency (MHz)
- 2500
- Max Frequency(MHz)
- 2700
- P3dB Output Power(W)
- 400
- Gain(dB)
- 14.0
- Efficiency(%)
- 50
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Broadband internal matching
- Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2675 MHz, 48 V, Doherty fixture
- Gain = 15 dB @ 47.2 dBm
- Efficiency = 53% @ 47.2 dBm
- Output power at P3dB = 400 W
- Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Pb-free and RoHS compliant
- GaN-on-SiC HEMT technology