GTRB266702FCV1A
High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz
The GTRB266702FCV1A is a GaN-on-SiC HEMT amplifier for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTRB266702FCV1A
- Description
- High Power RF GaN on SiC HEMT, 610W, 48V, 2620-2690 MHz
- Min Frequency (MHz)
- 2620
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 4
- Gain(dB)
- 14.2
- Efficiency(%)
- 66
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Peak Output Power(W)
- 610
- Technology
- GaN-on-SiC HEMT
Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 2690 MHz, 48 V, 10 μs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 610 W
- Efficiency @ P4dB = 65.8%
- Thermally Enhanced Package
- Pb-free and RoHS* Compliant