GTRB267008FC-V1
High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
The GTRB267008FC is a 620-watt (P4dB) GaN-on-SiC high electron mobility transistor (HEMT) designed for use in Doherty cellular power amplifier applications. It features high linearized efficiency across 2496 MHz to 2690 MHz operating frequency band and a thermally-enhanced packaged with earless flange.
Product Specifications
- Part Number
- GTRB267008FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 620 W, 48 V, 2496 - 2690 MHz
- Min Frequency (MHz)
- 2496
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 620
- Gain(dB)
- 15.0
- Efficiency(%)
- 52
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance, 2690 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
- Output power at P3dB = 620 W
- Efficiency at P4dB = 72%
- High linerized efficiency
- Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
- GaN-on-SiC HEMT technology