GTVA12600
Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC-1.4GHz frequencyThe GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermally-enhanced packages. band. They feature input matching; high efficiency; and thermally-enhanced packages.
Product Specifications
- Part Number
- GTVA12600
- Description
- Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 1400
- Gain(dB)
- 20.0
- Package Category
- Earless, Bolt Down
Features
- Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 ?s pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 ?s pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
- Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
- Pb-free and RoHS compliant
Applications
- Radar Amplifiers