GTVA12600

High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz

The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the 1200 to 1400 MHz frequecy band. They feature input matching; high efficiency; and thermally-enhanced packages.

Product Specifications

Part Number
GTVA12600
Description
High Power RF GaN on SiC HEMT; 600W; 50V; 1200MHz to 1400MHz
Min Frequency(MHz)
1200
Max Frequency(MHz)
1400
Peak Output Power(W)
600
Gain(dB)
20.0
Efficiency(%)
63
Operating Voltage(V)
50
Form
Packaged Discrete Transistor
Package Category
Earless, Bolt Down
Technology
GaN-on-SiC

Features

  • Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 ?s pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 ?s pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
  • Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


Order from MACOM

GTVA126001EC-V1
GTVA126001EC-V1
GTVA126001FC-V1
GTVA126001FC-V1