GTVA220701FA
High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
The GTVA220701FA is a 70-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTVA220701FA
- Description
- High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz
- Min Frequency (MHz)
- 1800
- Max Frequency(MHz)
- 2200
- P3dB Output Power(W)
- 45
- Gain(dB)
- 19.0
- Efficiency(%)
- 27
- Operating Voltage(V)
- 50
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 1880 MHz; 48 V
- Output power P3dB 45 W
- Efficiency 60.7%
- Gain 21.6 dB
- Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
- RoHS compliant
- Input matched