GTVA261701FA-V1
High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
The GTVA261701FA is a 170-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTVA261701FA-V1
- Description
- High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
- Min Frequency (MHz)
- 2300
- Max Frequency(MHz)
- 2700
- P3dB Output Power(W)
- 170
- Gain(dB)
- 17.0
- Efficiency(%)
- 43
- Operating Voltage(V)
- 50
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 2690 MHz; 48 V
- Output power P3dB 170 W
- Efficiency 75 %
- Gain 15 dB
- Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
- RoHS compliant
- Input matched