GTVA261802FC-V1
High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
The GTVA261802FC is a 170-watt GaN-on-SiC high electron mobility transistor for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Product Specifications
- Part Number
- GTVA261802FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 170 W, 48 V, 2620 - 2690 MHz
- Min Frequency (MHz)
- 2620
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 170
- Gain(dB)
- 16.8
- Efficiency(%)
- 43
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 2690 MHz, 48 V, 10% duty cycle
- Output power P3dB 170 W
- Efficiency 65.5 %
- Gain 15 dB
- Capable of handling 10:1 VSWR @ 48 V, 180 W (CW) output power
- Pb-free and RoHS compliant
- Input matched