GTVA262701FA-V2
High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
The GTVA262701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
Product Specifications
- Part Number
- GTVA262701FA-V2
- Description
- High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2620 - 2690 MHz
- Min Frequency (MHz)
- 2620
- Max Frequency(MHz)
- 2690
- P3dB Output Power(W)
- 270
- Gain(dB)
- 17.0
- Efficiency(%)
- 42
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 2690 MHz; 48 V, 10% duty cycle
- Output power P3dB 270 W
- Efficiency 66 %
- Gain 18.1 dB
- Capable of handling 10:1 VSWR @ 48 V, 60 W (WCDMA) output power
- Pb-free and RoHS compliant
- Input matched