GTVA263202FC-V1
High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz
The GTVA263202FC is a 340-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally enhanced surface-mount package with earless flange.
Product Specifications
- Part Number
- GTVA263202FC-V1
- Description
- High Power RF GaN-on-SiC HEMT 340 W, 48 V, 2620 - 2690 MHz
- Min Frequency (MHz)
- 2300
- Max Frequency(MHz)
- 2700
- P3dB Output Power(W)
- 340
- Gain(dB)
- 17.0
- Efficiency(%)
- 40
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Form
- Packaged Discrete Transistor
- Technology
- GaN-on-SiC
Features
- Typical Pulsed CW performance; 2690 MHz, 48 V, combined outputs
- Output power P3dB 340 W
- Efficiency 70 %
- Gain 16 dB
- Capable of handling 10:1 VSWR @ 48 V, 80 W (CW) output power
- Pb-free and RoHS compliant
- Input matched