GTVB222611FAV1A
High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz
The GTVB222611FA-V1A is a GaN on Silicon Carbide HEMT amplifier designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally enhanced package with earless flange.
Product Specifications
- Part Number
- GTVB222611FAV1A
- Description
- High Power RF GaN on SiC HEMT, 260W, 48V, 1805-2170 MHz
- Min Frequency (MHz)
- 1805
- Max Frequency(MHz)
- 2170
- P3dB Output Power(W)
- 260
- Gain(dB)
- 17.0
- Efficiency(%)
- 72
- Operating Voltage(V)
- 48
- Package Category
- Earless
- Peak Output Power(W)
- 260
Features
- GaN-on-SiC HEMT Technology
- Pulsed CW Performance: 2170 MHz, 48 V, 10 μs pulse width, 10% Duty Cycle, Combined Outputs
- Output Power @ P3dB = 260 W
- Efficiency @ P3dB = 72%
- Thermally Enhanced Package
- RoHS* Compliant