The LM202602-H-x-300 are surface mount silicon PIN diode limiters manufactured using a proven hybrid manufacturing process incorporating PIN diodes and passive devices integrated on a ceramic substrate. This low profile, compact, surface mount component, offers superior low and high signal performance to comparable MMIC devices in QFN packages. The limiter modules are designed to optimize small signal insertion loss and large signal flat leakage performance in a compact, surface mount package. The LM202602-H-A-300 has shunt PIN limiter diodes and a shunt coil with no DC blocks whereas the LM202602-H-C-300 incorporates shunt PIN limiters diodes, a shunt coil, and DC blocks. Using PIN diodes with lower thermal resistance (<40 W), RF CW incident power levels of 36 dBm and RF peak incident power levels of 50 dBm at 1 μs RF pulse width, 0.001 duty cycle are very achievable in broadband limiter applications. The lower PIN diode series resistance (<1.5 Ω) coupled with the smaller minority carrier lifetime (<20 ns) provides lower flat leakage power (<20 dBm) and lower spike leakage energy (<0.1 Ergs) for superior LNA protection. The LM202602-H-x-300 limiters are ideal for 2 to 6 GHz Radar, IED, and WiMax applications requiring high volume, surface mount, solder re-flow manufacturing. These products are durable, reliable, and capable of meeting all military, commercial, and industrial environments.