MACOM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST),PIN diode switch. The switch features enhanced Al-GaAs anodes which are formed using MACOM’s patented hetero-junction technology. This technology produces a switch with less loss than conventional AlGaAs processes. As much as a 0.3
dB reduction in insertion loss can be realized at
50GHz. The fabrication process is designed for high
device uniformity and extremely low parasitics. The
diodes themselves exhibit low series resistance, low
capacitance, and fast switching speed. They are fully
passivated with silicon nitride and have an additional
polymer layer for scratch protection. The protective
coating prevents damage to the diode junction and
anode air-bridges during handling and assembly. Off
chip bias circuitry is required.
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These versatile AlGaAs PIN
switches can be used in a variety of microwave
applications such as switching arrays for radar
systems, radiometers, test equipment and other
multi-assembly components.