MA4AGSW2

AlGaAs Reflective

The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented heterojunction technology. This technology produces a switch with less loss than conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50GHz. These devices are fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage to the diode junction and anode air-bridges during handling and assembly. Off chip bias circuitry is required. The high electron mobility of AlGaAs and the low capacitance of the PIN diodes makes this switch ideal for fast switching, high frequency, multi-throw switch designs. These AlGaAs PIN switches are use in switching arrays for radar systems, radiometers, test equipment and other multi-assembly components.

Product Specifications

Part Number
MA4AGSW2
Short Description
AlGaAs Reflective
Min Frequency(MHz)
50
Max Frequency(MHz)
50000
Isolation(dB)
46
Insertion Loss (dB)
0.600
IIP3(dBm)
40
IP1dB(dBm)
29
CW Incident Power(W)
0.2
Compatible Parts
MADR-007097-000100
Compatible Parts
MADR-007097-000100
Package Category
Die
Package
DIE
ROHS
Yes

Features

  • Ultra Broad Bandwidth : 50 MHz to 50 GHz
  • RoHS* Compliant
  • Low Current consumption: -10mA for low loss state, +10mA for Isolation state
  • 33 dB Isolation at 50 GHz
  • 0.7 dB Insertion Loss
  • Functional Bandwidth : 50 MHz to 70 GHz
  • Polymer Scratch protection
  • Silicon Nitride Passivation
  • MACOM’s unique AlGaAs Hetero-Junction Anode Technology
  • 260°C Reflow Compatible

Applications

  • Aerospace and Defense
  • ISM

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